aug.1999 pin configuration (top view) mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array description m54583p and m54583fp are eight-circuit collector-current- synchronized darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. features l high breakdown voltage (bv ceo 3 50v) l high-current driving (ic(max) = 400ma) l active l-level input l with input clamping diodes l wide operating temperature range (ta = C20 to +75 c) application interfaces between microcomputers and high-voltage, high- current drive systems, drives of relays and printers, and mos-bipolar logic ic interfaces function the m54583 is produced by adding pnp transistors to m54523 inputs. eight circuits having active l-level inputs are provided. resistance of 7k w and diode are provided in series between each input and pnp transistor base. the input diode is in- tended to prevent the flow of current from the input to the v cc . without this diode, the current flow from h input to the v cc and the l input circuits is activated, in such case where one of the inputs of the 8 circuits is h and the others are l to save power consumption. the diode is inserted to prevent such misoperation. this device is most suitable for a driver using nmos ic out- put especially for the driver of current sink. collector current is 400ma maximum. collector-emitter sup- ply voltage is 50v. the 54583fp is enclosed in a molded small flat package, enabling space saving design. circuit diagram (each circuit) 1 in1 ? input output in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? v cc v cc ? o8 in8 ? gnd 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 outline 18p4g m54583p m54583fp 1 nc input output nc : no connection in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? ? o8 in7 ? in8 ? 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 gnd ? 10 11 ? o7 ? o6 ? o5 ? o4 ? o2 ? o3 ? o1 nc outline 20p2n-a 7k 2.7k 7k 7.2k 3k input gnd v cc output the eight circuits share the v cc and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w
aug.1999 ton 50% 50% 50% 50% toff input output pg 50 w c l r l v cc v o input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 0.4 to 4v (2) input-output conditions : r l = 30 w , v o = 10v, v cc = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array timing diagram note 1 test circuit 10 C0.5 ~ +50 C0.5 ~ v cc 400 1.79/1.1 C20 ~ +75 C55 ~ +125 v v v ma w c c absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) ratings unit symbol parameter conditions supply voltage collector-emitter voltage input voltage collector current power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board v cc v ceo v i i c p d t opr t stg ns ns t on t off 130 3200 symbol unit parameter test conditions limits min typ max switching characteristics (unless otherwise noted, ta = 25 c) c l = 15pf (note 1) turn-on time turn-off time v v v 8 v cc v cc C3.6 5 4 v cc C0.7 0 v cc v ih v il collector current per channel recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) i c 0 0 ma 350 200 parameter limits symbol unit supply voltage min typ max h input voltage l input voltage v cc = 5v, duty cycle p : no more than 34% fp : no more than 15% v cc = 5v, duty cycle p : no more than 10% fp : no more than 5% v m a ma v (br) ceo i i i cc h fe v v ce (sat) 2.2 1.6 C600 3 i ceo = 100 m a, v cc = 8v v i = v cc C3.6v v cc = 5v, v i = v cc C3.6v v ce = 4v, v cc = 5v, i c = 350ma, ta = 25 c symbol unit parameter test conditions limits min typ + max 50 2000 1.1 0.98 C320 10000 + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. collector-emitter breakdown voltage input current supply current (one circuit coming on) dc amplification factor collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) i c = 350ma i c = 200ma v i = v cc C3.6v
aug.1999 mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array typical characteristics thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) collector current ic (ma) ta = ?0 c ta = 25 c ta = 75 c v i = 1.4v v cc = 5v ta = ?0 c ta = 25 c ta = 75 c 0 100 200 300 400 500 0 2.0 0.5 1.0 1.5 m54583p m54583fp duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583p) 0 100 200 300 400 500 0 20406080100 6 5 7 8 duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583fp) 0 100 200 300 400 500 0 20406080100 6 5 7 8 duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583p) 0 100 200 300 400 500 0 20406080100 6 5 7 8 ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (m54583fp) 0 100 200 300 400 500 0 20406080100 6 5 7 8 ?cc =5.0v ?a = 75 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25 c
aug.1999 mitsubishi semiconductor m54583p/fp 8-unit 400ma darlington transistor array dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 10 1 10 2 3 22 57 10 3 357 10 2 10 3 3 5 7 10 4 3 2 2 5 7 ta = ?0 c ta = 25 c ta = 75 c v cc = 4v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c supply current icc (ma) 0 100 200 300 400 0 supply voltage v cc (v) 1.0 2.0 3.0 4.0 supply current characteristics collector current ic (ma) supply voltage-input voltage v cc v i (v) grounded emitter transfer characteristics ta = ?0 c ta = 25 c ta = 75 c v cc = 4v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c ta = ?0 c ta = 25 c ta = 75 c v i = 0v ta = ?0 c ta = 25 c ta = 75 c 0 1 2 3 4 5 0246810 input characteristics supply voltage-input voltage v cc v i (v) input current i i (ma) ta = ?0 c ta = 25 c ta = 75 c v cc = 5v ta = ?0 c ta = 25 c ta = 75 c 0 ?.2 ?.4 ?.6 ?.8 ?.0 012345
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